IRLML6302 DATASHEET PDF

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. This benefit,. A customized leadframe has been incorporated into the. The low. Absolute Maximum Ratings.

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This benefit,. A customized leadframe has been incorporated into the. The low. Absolute Maximum Ratings. Power Dissipation. Linear Derating Factor. Gate-to-Source Voltage. Junction and Storage Temperature Range. PD - G. Thermal Resistance. R DS ON. Static Drain-to-Source On-Resistance. V GS th. Gate Threshold Voltage. I GSS. Gate-to-Source Forward Leakage. Gate-to-Source Reverse Leakage.

Q g Total Gate Charge. Q gs Gate-to-Source Charge. Q gd Gate-to-Drain "Miller" Charge. Turn-On Delay Time. Rise Time. Turn-Off Delay Time. C iss Input Capacitance. C oss Output Capacitance.

C rss Reverse Transfer Capacitance. Source-Drain Ratings and Characteristics. I S Continuous Source Current. Body Diode. Q rr Reverse RecoveryCharge.

See fig. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. D S www.

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IRLML6302 MOSFET. Datasheet pdf. Equivalent

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IRLML6302 Datasheet

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