Datasheet pdf. Bipolar PNP Device. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not 1. AM www. These devices are particularly suited for low voltage application such as cellular phone and noteb 1.
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Gate Charge Typical 48nC. High ruggedness. General Description. This N-channel enhancement mode field-effect power transistor. Also, especially designed to minimize rds on and high rugged. The TO pkg is well suited for. Absolute Maximum Ratings. V DSS. Drain to Source Voltage.
Drain Current Pulsed. Gate to Source Voltage. Single Pulsed Avalanche Energy. Repetitive Avalanche Energy. Maximum Lead Temperature for soldering purpose,. Thermal Characteristics. Thermal Resistance, Junction-to-Case. Thermal Resistance, Case to Sink. Thermal Resistance, Junction-to-Ambient. Note 1. Note 2. Note 3. March, Off Characteristics.
T J coefficient. I GSS. Gate-Source Leakage, Forward. Gate-source Leakage, Reverse. On Characteristics. R DS ON. Static Drain-Source On-state Resis-. Dynamic Characteristics. C iss Input Capacitance. C oss. C rss. Output Capacitance. Reverse Transfer Capacitance. Turn-on Delay Time. Rise Time. Turn-off Delay Time. Fall Time. Total Gate Charge.
Gate-Source Charge. Test Conditions. Note 4, 5. Typ Max Units. Source-Drain Diode Ratings and Characteristics. Continuous Source Current.
Pulsed Source Current. Diode Forward Voltage. Reverse Recovery Time. Reverse Recovery Charge. Integral Reverse p-n Junction. Repeativity rating : pulse width limited by junction temperature. Essentially independent of operating temperature.
Download DFP Datasheet. Gate 2. Drain 3. Also, especially designed to minimize rds on and high rugged avalanche characteristics. The TO pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast. Repeativity rating : pulse width limited by junction temperature 2.
DFP740 Datasheet PDF
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PDF DFP740 Datasheet ( Hoja de datos )